Windmill® 1310nm/1550nmSuperluminescent diode chips are high-performance products based on quantum well epitaxial layer growth technology and high-reliability ridge waveguide structures.,Features high output optical power and low spectral ripple noise。
Chip size1000μm*350μm*100μm。
absolute maximum ratings
| parameter | symbol | condition | minimum value | maximum value | unit |
| storage temperature | Tst | -40 | 100 | ℃ | |
| working temperature | Top | -25 | 85 | ℃ | |
| Laser forward current
(CW) |
I | CW | – | 500 | mA |
| Laser reverse voltage | Vr | – | 2 | V | |
| Static electricity recharge | ESD | 500 | V |
Main performance parameters
| parameter | symbol | condition | minimum value | Typical value | maximum value | unit |
| Amplify self-excited radiation power | PASE | I=300Ma, CW | 36 | 40 | mW | |
| Gain fluctuation | δG | I=100Ma, CW | 1 | dB | ||
| Normal/Angular plane beam angle | 21.5 | deg | ||||
| Operating Voltage | Vf | I=300Ma, CW | 1.6 | 1.8 | V | |
| Series resistance | Rs | I=300Ma, CW | 1.0 | Ohm | ||
| central wavelength | λ | I=100Ma, CW | 1306
1550 |
nm | ||
| wavelength/temperature coefficient | λ | I=100Ma, CW, 25℃~52℃ | 0.59 | nm/℃ | ||
| far field | θ∥ | I=100Ma, CW | 17 | deg | ||
| θ⊥ | 21 | deg |
illustrate:Unless otherwise specified,All data test temperature25℃
Recommended bonding conditions
| process | Suggested conditions | |
| chip bonding | solder | AuSn |
| temperature | 320~350℃ | |
| duration | at most5s | |
| pressure | 12gf | |
| working environment | N2 airflow | |
| wire bonding | gold thread | |
| Ball soldering | ||
| Lead diameter | 20μm | |
| weight | 20~25g | |
| temperature | 140~160℃ | |